12F(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 12 A FEATURES * High surge current capability RoHS * Stud cathode and stud anode version COMPLIANT * Wide current range * Types up to 1200 V VRRM * RoHS compliant * Designed and qualified for industrial and consumer level TYPICAL APPLICATIONS DO-203AA (DO-4) * Battery charges * Converters PRODUCT SUMMARY * Power supplies IF(AV) 12 A * Machine tool controls MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) VALUES 12 A TC 144 C 19 A 50 Hz 265 60 Hz 280 IF(RMS) IFSM I2 t VRRM UNITS A 50 Hz 351 60 Hz 320 Range 100 to 1200 V - 65 to 175 C TJ A2 s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 12F(R) VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V VR(BR), MINIMUM AVALANCHE VOLTAGE V (1) 10 100 150 - 20 200 275 - 40 400 500 500 60 600 725 750 80 800 950 950 100 1000 1200 1150 120 1200 1400 1350 IRRM MAXIMUM AT TJ = 175 C mA 12 Note (1) Avalanche version only available from V RRM 400 V to 1200 V Document Number: 93487 Revision: 29-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 12F(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 12 A FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current Maximum on-repetitive peak reverse power IF(AV) TEST CONDITIONS 180 conduction, half sine wave IF(RMS) PR(1) 10 s square pulse, TJ = TJ maximum t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VALUES UNITS 12 A 144 C 19 A 7 K/W No voltage reapplied 265 100 % VRRM reapplied 225 No voltage reapplied 280 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied A 235 351 320 250 A2s 226 t = 0.1 to 10 ms, no voltage reapplied 3510 Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.77 High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 0.97 A2s V Low level value of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 10.70 High level value of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 6.20 Ipk = 38 A, TJ = 25 C, tp = 400 s rectangular wave 1.26 V VALUES UNITS Maximum forward voltage drop m VFM Note (1) Available only for avalanche version, all other parameters the same as 12F THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range SYMBOL TEST CONDITIONS TJ - 65 to 175 Maximum storage temperature range TStg - 65 to 200 Maximum thermal resistance, junction to case RthJC DC operation Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased Allowable mounting torque Lubricated threads Approximate weight www.vishay.com 2 2 K/W Not lubricated threads Case style C See dimensions - link at the end of datasheet For technical questions, contact: ind-modules@vishay.com 0.5 1.5 + 0 - 10 % N*m 13 lbf * in 1.2 + 0 - 10 % N*m 10 lbf * in 7 g 0.25 oz. DO-203AA (DO-4) Document Number: 93487 Revision: 29-Sep-08 12F(R) Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 12 A RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180 0.33 0.26 120 0.41 0.44 90 0.53 0.58 60 0.78 0.81 30 1.28 1.29 TEST CONDITIONS UNITS TJ = TJ maximum K/W 180 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 12F(R) Series RthJC (DC) = 2.0 K/W 170 Conduction Angle 160 150 30 60 90 120 180 140 2 4 6 8 10 12 12F(R) Series RthJC (DC) = 2.0 K/W 170 160 Conduction Period 150 30 60 90 120 140 180 DC 130 14 0 4 8 12 16 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) 0 180 14 180 120 90 60 30 12 10 10 K/ W 12 K/W th SA 6 =8 K/ W 15 K/W K/ W -D elt aR 20 K /W RMS Limit 8 R 20 6 30 K/W Conduction Angle 4 12F(R) Series TJ = 175C 2 0 0 2 4 6 8 10 12 Average Forward Current (A) 14 0 25 50 75 100 Maximum Allowable Ambient Temperature (C) Fig. 3 - Forward Power Loss Characteristics Document Number: 93487 Revision: 29-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 12F(R) Series Vishay High Power Products Standard Recovery Diodes Maximum Average Forward Power Loss (W) (Stud Version), 12 A 20 R DC 180 120 90 60 30 16 12 8K /W thS A = 6K /W 10 K /W 12 K /W 15 K /W -D elta R 20 K/W 8 RMS Limit Conduction Period 4 30 K/W 12F(R) Series TJ = 175C 0 0 4 8 12 16 Average Forward Current (A) 0 20 25 50 75 100 Maximum Allowable Ambient Temperature (C) 250 1000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 175C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 225 200 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 175 150 125 12F(R) Series TJ = 25C TJ = 175C 100 10 12F(R) Series 1 100 1 10 0 100 1 250 225 200 175 150 125 100 0.01 12F(R) Series 0.1 1 4 5 6 Fig. 7 - Forward Voltage Drop Characteristics Transient Thermal Impedance ZthJC (K/W) Peak Half Sine Wave Forward Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 175C No Voltage Reapplied Rated VRRM Reapplied 3 Instantaneous Forward Voltage (V) Number Of Equal Amplitude Half Cycle Current Pulses (N) 275 2 10 Steady State Value R thJC = 2.0 K/W (DC Operation) 1 12F(R) Series 0.1 0.001 0.01 0.1 1 10 Pulse Train Duration (s) Square Wave Pulse Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93487 Revision: 29-Sep-08 12F(R) Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 12 A ORDERING INFORMATION TABLE Device code 12 F R 120 M 1 2 3 4 5 1 - Current rating: Code = IF(AV) 2 - F = Standard device 3 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 4 - Voltage code x 10 = VRRM (see Voltage Ratings table) 5 - None = Stud base DO-203AA (DO-4) 10-32UNF-2A M = Stud base DO-203AA (DO-4) M5 x 0.8 (not available for avalanche diodes) LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93487 Revision: 29-Sep-08 http://www.vishay.com/doc?95311 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors DO-203AA (DO-4) DIMENSIONS in millimeters (inches) + 0.3 0 + 0.01 (0.08 0) 0.8 0.1 (0.03 0.004) 3.30 (0.13) 4.00 (0.16) 2 5.50 (0.22) MIN. R 0.40 R (0.02) O 1.80 0.20 (O 0.07 0.01) 20.30 (0.80) MAX. O 6.8 (0.27) 10.20 (0.40) MAX. 3.50 (0.14) 11.50 (0.45) 10.70 (0.42) 10/32" UNF-2A For metric devices: M5 x 0.8 11 (0.43) Document Number: 95311 Revision: 30-Jun-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000